1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 strongir fet? irl6283mtrpbf base part number package type standard pack orderable part number form quantity irl6283mtrpbf directfet medium can tape and reel 4800 irl6283mtrpbf applications ? ? oring, efuse, and high current load switch ? ? ? load switch for battery application ? ? inverter switches for dc motor application features and benefits ? ? environmentally friendly product ? ? rohs compliant containing no lead, no bromide and no halogen ? ? very low r ds(on) sq sx st mq md mt mp mc typical values (unless otherwise specified) v dss v gs r ds(on) r ds(on) 20v max 12v max 0.65m @4.5v 1.1m @2.5v v gs(th) 0.8v r ds(on) 0.50m @10v description the irl6283mtrpbf combines the latest hexfet ? n-channel power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.6 mm profile. the direct- fet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application not e an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maxi mize thermal transfer in power systems, improving previous be st thermal resistance by 80%. absolute maximum ratings parameter max. units v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 4.5v ?? 38 i d @ t a = 70c continuous drain current, v gs @ 4.5v ?? 30 i dm pulsed drain current ?? 305 i d @ t c = 25c continuous drain current, v gs @ 4.5v ?? 211 e as single pulse avalanche energy ? 406 i ar avalanche current ? 30 a mj a fig 1. typical on-resistance vs. gate voltage 0 50 100 150 200 250 300 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v vds= 4.0v i d = 30a fig 2. typical total gate c harge vs gate-to-source voltage notes: ? ? click on this section to link to the appropriate technical paper. ?? click on this section to link to the directfet website. ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple mounted to top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.88mh, r g = 50 , i as = 30a. directfet ? isometric md 0 1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t y p i c a l r d s ( o n ) ( m ) i d = 38a t j = 25c t j = 125c applicable directfet outline and subs trate outline (see p.7,8 for details) ? applicable directfet outline and subs trate outline (see p.7,8 for details) ? directfet ? n-channel power mosfet ? dd s s s g s
2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a bv dss / t j breakdown voltage temp. coefficient ??? 4.8 ??? mv/c reference to 25c, i d = 1.0ma r ds(on) static drain-to-source on-resistance ??? 0.65 0.87 m v gs = 4.5v, i d = 50a ? ??? 1.1 1.5 v gs = 2.5v, i d = 50a ? v gs(th) gate threshold voltage 0.5 0.8 1.1 v v ds = v gs , i d = 100a v gs(th) gate threshold voltage coefficient ??? -3.9 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 16v, v gs = 0v ??? ??? 150 v ds = 16v, v gs = 0v, t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v gfs forward transconductance 320 ??? ??? s v ds = 10v, i d = 30a q g total gate charge ??? 105 158 q gs1 pre-vthgate-to-source charge ??? 9.7 ??? v ds = 10v q gd gate-to-drain charge ??? 35 ??? i d = 30a q oss output charge ??? 50 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.1 ??? t d(on) turn-on delay time ??? 23 ??? v dd = 20v, v gs = 4.5v ? t r rise time ??? 160 ??? ns i d = 30a t d(off) turn-off delay time ??? 116 ??? r g = 1.8 t f fall time ??? 192 ??? c iss input capacitance ??? 8292 ??? v gs = 0v c oss output capacitance ??? 2012 ??? pf v ds = 10v c rss reverse transfer capacitance ??? 1526 ??? ? = 1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 211 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 305 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 30a, v gs = 0v ? t rr reverse recovery time ??? 48 72 ns t j = 25c, i f = 30a,v dd = 10v q rr reverse recovery charge ??? 84 126 nc di/dt = 200a/s ? q gs2 post-vth gate-to-source charge ??? 8.9 ??? nc v gs = 4.5v q odr gate charge overdrive ??? 51 ??? q sw switch charge (q gs2 + q gd ) ??? 44 ??? ??? 0.50 0.75 v gs = 10v, i d = 50a ? notes: ? repetitive rating; pulse width limited by max. junction temperature. ?? pulse width 400s; duty cycle 2%.
3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf fig 3. maximum effective transient thermal impedance, junction-to-ambient ? absolute maximum ratings parameter max. units p d @t a = 25c power dissipation ? 2.1 w p d @t a = 70c power dissipation ? 1.3 p d @t c = 25c power dissipation ? 63 t p peak soldering temperature 270 c t j operating junction and -40 to + 150 t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ? ??? 60 r jc junction-to-case ?? ??? 1.97 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor ? 0.02 w/c r ja junction-to-ambient ? 12.5 ??? r ja junction-to-ambient ? 20 ??? c/w 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r ma l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple mounted to top (drain) of part. ?? ? used double sided cooling , mounti ng pad with large heat sink. ?? mounted on minimum footprint full size board with metalized back and with small clip heat sink. ? r is measured at tj of approximately 90c.
4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf 0.4 0.8 1.2 1.6 2.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width fig 4. typical output characteristics 0 40 80 120 160 200 i d , drain current (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t y p i c a l r d s ( o n ) ( m ) t j = 25c vgs = 2.0v vgs = 2.5v vgs = 3.5v vgs = 4.5v vgs = 6.0v vgs = 8.0v vgs = 10v fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical on-resistance vs. drain current and voltage fig 6. typical transfer characteristics fig 5. typical output characteristics 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 2.5v 2.25v 2.0v 1.8v 1.6v bottom 1.4v 60s pulse width tj = 25c 1.4v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60s pulse width tj = 150c vgs top 10v 4.5v 2.5v 2.25v 2.0v 1.8v 1.6v bottom 1.4v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 38a v gs = 10v v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf fig 11. maximum safe operating area fig 10. typical source-drain diode forward voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 400 800 1200 1600 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.8a 2.6a bottom 30a fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a fig 13. typical threshold voltage vs. junction temperature fig 14. maximum avalanche energy vs. drain current 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 i d , d r a i n c u r r e n t ( a ) 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc
6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf fig 15a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 15b. gate charge waveform fig 16a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms fig 17a. switching time test circuit fig 17b. switching time waveforms vdd
7 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf fig 18. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets g = gate d = drain s = source g d s dd d s s directfet ? board footprint, md outline (medium size can, d-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. note: for the most current drawing please refer to ir website at http://www.irf.com/package/
8 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet ? outline dimension, md outline (medium size can, d-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking dimensions are shown in millimeters (inches) code a b c d e f g h j l m p 0.017 0.007 0.083 0.156 0.018 0.024 max 0.250 0.38 0.08 2.08 3.85 0.35 0.58 min 6.25 4.80 0.42 0.17 2.12 3.95 0.45 0.62 max 6.35 5.05 0.015 0.003 0.082 0.152 0.023 0.014 min 0.189 0.246 metric imperial dimensions 0.93 0.97 1.28 1.32 0.038 0.037 0.052 0.050 r j1 0.035 0.92 0.88 0.036 k 0.199 0.02 0.08 0.0008 0.0031 0.023 0.535 0.595 0.021 0.024 0.58 0.62 0.023 0.044 1.08 1.12 0.043 part number batch number date code line above the last character of the date code indicates "lead-free" gate marking logo
9 www.irf.com ? 2014 international rectifier submit datasheet feedback september 24, 2014 irl6283mtrpbf ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ directfet ? tape & reel dimension (showing component orientation). qualification information ? moisture sensitivity level directfet msl1 (per jedec j-std-020d ??) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standard at the time of product release. note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irl6283mtrpbf). for 1000 parts on 7" reel, order irl6283mtr1pbf reel dimensions max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ revision history date comments 2/4/2014 ? converted the data sheet to strongirfet template. ? updated the schematic drawing, on page 1. 9/24/2014 ? updated notes on page 2 & page 3
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